Datasheet > BLG60T65FDL

BLG60T65FDL

更新时间： 2023-12-06 20:08:51

品牌	Logo	应用领域
上海贝岭 - BELLING		双极性晶体管
页数	文件大小	规格书
16页	1143K
描述
BLG60T65FDL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications.

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BLG60T65FDL 数据手册

BLG60T65FDL

IGBT

1．Description

BLG60T65FDL is obtained by advanced

Trench Field Stop (T-FS) technology which is

characteristic with low V_CE(sat), optimized

switching performance and low gate charge Q_g.

The IGBT is suitable device for Photovoltaic,

UPS, Boost and high switching frequency

applications.

KEY CHARACTERISTICS

Parameter

V_CES

I_C

Value

650

Unit

V_CE(sat).typ

FEATURES

1.6

⚫

Fast Switching

Low V_CE(sat)

Positive temperature coefficient

Fast recovery anti-parallel diode

RoHS product

TO-3PN

TO-247

TO-3PF

APPLICATIONS

⚫

Photovoltaic converters

UPS

Boost

ORDERING INFORMATION

Device Marking

Ordering Codes

Package

TO-247

TO-3PF

TO-3PN

Product Code Packing

BLG60T65FDL-F

BLG60T65FDL-K

BLG60T65FDL-W

G60T65FDL

Tube

60T65FDL

BLG60T65FDL-F/K/W

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year & Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLG60T65FDL: 650V 60A

(2) F:TO-247

K:TO-3PF

W:TO-3PN

BLG60T65FDL

Rev2.0

06/2023

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