Datasheet > BLG75T65FDL

BLG75T65FDL

更新时间： 2024-11-10 14:52:35

品牌	Logo	应用领域
上海贝岭 - BELLING		双极性晶体管
页数	文件大小	规格书
13页	809K
描述
BLG75T65FDL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications.

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BLG75T65FDL 数据手册

BLG75T65FDL

IGBT

1．Description

BLG75T65FDL is obtained by advanced

Trench Field Stop (T-FS) technology which is

characteristic with low V_CE(sat), optimized switching

performance and low gate charge Q_g. The IGBT is

suitable device for Photovoltaic, UPS, Boost and

high switching frequency applications.

KEY CHARACTERISTICS

Parameter

V_CES

I_C

Value

650

Unit

V_CE(sat).typ

FEATURES

1.7

⚫

Fast Switching

Low V_CE(sat)

Positive temperature coefficient

Fast recovery anti-parallel diode

RoHS product

APPLICATIONS

TO-247

⚫

Photovoltaic converters

UPS

Boost

ORDERING INFORMATION

Device Marking

75T65FDL

Ordering Codes

BLG75T65FDL-F

Package

TO-247

Product Code

G75T65FDL

Packing

Tube

BLG75T65FDL-F

(2) Package type

(1) Chip name

XXXX：Product Code

XXXX

YYWW ZZ

SSSSS

YYWW：Year & Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLG75T65FDL: 650V 75A

(2) F:TO-247

BLG75T65FDL

Rev2.0

2/2023

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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