Datasheet > BLG50T65

BLG50T65

更新时间： 2024-11-10 14:54:27

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
16页	1083K
描述
BLG50T65

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中文翻译

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数据手册

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BLG50T65 数据手册

BLG50T65FDLA

IGBT

1．Description

BLG50T65FDLA is obtained by advanced

Trench Field Stop (T-FS) technology which is

characteristic with low V_CE(sat) , optimized

switching performance and low gate charge Qg.

The IGBT is suitable device for Photovoltaic,

UPS and high switching frequency applications.

KEY CHARACTERISTICS

Parameter

V_CES

I_C

Value

650

Unit

V_CE(sat).typ

FEATURES

1.6

⚫

Fast Switching

Low V_CE(sat)

Positive temperature coefficient

Fast recovery anti-parallel diode

RoHS product

TO-3PN

TO-247

TO-3PF

APPLICATIONS

⚫

Photovoltaic converters

UPS

⚫

ORDERING INFORMATION

Device Marking

Ordering Codes

Package

TO-247

TO-3PF

TO-3PN

Product Code Packing

BLG50T65FDLA-F

BLG50T65FDLA-K

BLG50T65FDLA-W

G50T65FDLA

Tube

50T65FDLA

BLG50T65FDLA-F/K/W

XXXX：Product Code

(2) Package

type

XXXX

YYWW ZZ

SSSSS

YYWW：Year & Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) Chip name

(1) BLG50T65FDLA: 650V 50A

(2) F:TO-247

K:TO-3PF

W:TO-3PN

BLG50T65FDLA

Rev2.0

02/2023

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