Datasheet > BLM8205E

BLM8205E

更新时间： 2024-11-17 17:01:51

品牌	Logo	应用领域
上海贝岭 - BELLING		电池
页数	文件大小	规格书
9页	846K
描述
The BLM8205E uses advanced trench technology to provide excellent and RDS(ON), low gate charge and operation with gate voltages as low as 0.7V. This device is suitable for use as a Battery protection or other switching application.

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BLM8205E 数据手册

BLM8205E

Power MOSFET

1．Description

The BLM8205E uses advanced trench

technology to provide excellent and R_DS(ON),low

gate charge and operation with gate voltages

as low as 0.7V.This device is suitable for use

as a Battery protection or other switching

application.

Schematic diagram

KEY CHARACTERISTICS

Parameter_SOT23-6Value Unit

I_D

R_DS(ON)@4.5V_.Typ

R_DS(ON)@2.5V_.Typ

FEATURES

mΩ



High power and current handing capability

Lead free product is acquired

RoHS product

Marking and pin assignment

APPLICATIONS



Load switch

PWM Application

Power management

Top view

ORDERING INFORMATION

Device Marking Ordering Codes

Package Product Code

Packing

Reel

8205E

BLM8205E-J

BLM8205E-G

TSSOP-8

SOT23-6

BLM8205E

BLM8205E-J,G

(2) Package type

(1) Chip name

(1)BLM8205E:19.5V 18mΩ

(2)J:TSSOP-8

8205E：Device Marking

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

G:SOT23-6

BLM8205E

Rev 1.0

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