Datasheet > BLM8D1822S-50PBY

BLM8D1822S-50PBY

更新时间： 2024-10-02 22:07:43

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描述
RF MOSFET LDMOS 28V 16-HSOPF

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BLM8D1822S-50PBY 数据手册

BLM8D1822S-50PB;

BLM8D1822S-50PBG

LDMOS 2-stage integrated Doherty MMIC

Rev. 4 — 28 September 2018

Product data sheet

1. Product profile

1.1 General description

The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC

solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and

peaking device, input splitter and output combiner are integrated in a single package. This

multiband device is perfectly suited as general purpose driver or small cell final in the

frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.

Table 1.

Performance

Typical RF performance at T_case= 25 °C; I_Dq= 104 mA (carrier); V_GSq(peaking)= V_GSq(carrier)− 0.65 V.

Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF; per section.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

ACPR_5M

(dBc)

34

(MHz)

2167.5

(dB)

26.5

(%)

single carrier W-CDMA

1.2 Features and benefits

 Integrated input splitter

 Integrated output combiner

 High efficiency

 Designed for broadband operation (frequency 1805 MHz to 2170 MHz)

 High section-to-section isolation enabling multiple combinations

 Integrated temperature compensated bias

 Independent control of carrier and peaking bias

 Integrated ESD protection

 Excellent thermal stability

 Source impedance 50 ; high power gain

 For RoHS compliance see the product details on the Ampleon website

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