Datasheet > BLM8G0710S-45ABGY

BLM8G0710S-45ABGY

更新时间： 2024-01-04 23:17:21

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
21页	1890K
描述
RF FET LDMOS 65V 35DB SOT12122

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLM8G0710S-45ABGY 数据手册

浏览型号BLM8G0710S-45ABGY的Datasheet PDF文件第2页

浏览型号BLM8G0710S-45ABGY的Datasheet PDF文件第3页

浏览型号BLM8G0710S-45ABGY的Datasheet PDF文件第4页

浏览型号BLM8G0710S-45ABGY的Datasheet PDF文件第5页

浏览型号BLM8G0710S-45ABGY的Datasheet PDF文件第6页

BLM8G0710S-45AB;

BLM8G0710S-45ABG

LDMOS 2-stage power MMIC

Rev. 3 — 15 October 2015

Product data sheet

1. Product profile

1.1 General description

The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using

Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly

suited as small cell final stage in Doherty configuration, or as general purpose driver in the

700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

Table 1.

Performance

Typical RF performance at T_case= 25 C. Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB

at 0.01% probability on CCDF; specified in a class-AB production circuit.

[1]

Test signal

I_Dq1

I_Dq2

V_DSP_L(AV)G_p

(V) (W) (dB)

_D

ACPR_5M

(dBc)

(MHz) (mA)

(mA)

(%)

single carrier W-CDMA

carrier section

957.5 30

957.5 60

120

240

34.7

41.5

40

peaking section

[1] I_Dq1represents driver stage; I_Dq2represents final stage.

1.2 Features and benefits

 Designed for broadband operation (frequency 700 MHz to 1000 MHz)

 High section-to-section isolation enabling multiple combinations

 High Doherty efficiency thanks to 2 : 1 asymmetry

 Integrated temperature compensated bias

 Biasing of individual stages is externally accessible

 Integrated ESD protection

 Excellent thermal stability

 High power gain

 On-chip matching for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications

 RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency

range. Possible circuit topologies are the following as also depicted in Section 8.1:

 Asymmetric final stage in Doherty configuration

 Asymmetric driver for high power Doherty amplifier

12 3 4 5 6 7...21

中文翻译

下载PDF

与BLM8G0710S-45ABGY相关器件

型号	品牌	获取价格	描述	数据表
BLM8G0710S-45ABY	ETC	获取价格	RF FET LDMOS 65V 35DB SOT12112
BLM8G0710S-60PBGY	ETC	获取价格	RF FET LDMOS 65V 36.2DB SOT12122
BLM8G0710S-60PBY	ETC	获取价格	RF FET LDMOS 65V 36.2DB SOT12112
BLM90N10L	BELLING	获取价格	BLM90N10L uses advanced trench technology and design to provide excellent RDS(ON) with low
BLM9435	BELLING	获取价格	"This device is produced with high cell density, DMOS trench technology, which is especial
BLM9D0708-05AM	AMPLEON	获取价格	LDMOS 1-stage integrated Doherty MMIC
BLM9D0910-05AM	AMPLEON	获取价格	LDMOS 1-stage integrated Doherty MMIC
BLM9D1819-08AM	AMPLEON	获取价格	LDMOS 2-stage integrated Doherty MMIC
BLM9D1822-30B	AMPLEON	获取价格	LDMOS 2-stage integrated Doherty MMIC
BLM9D1822S-60PBG	AMPLEON	获取价格	LDMOS 2-stage integrated Doherty MMIC