型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BLM8G0710S-30PBGY | ETC |
获取价格 |
IC MMIC DUAL 2-STAGE 16HSOP |
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BLM8G0710S-30PBY | ETC |
获取价格 |
RF FET LDMOS 65V 35DB SOT12112 |
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BLM8G0710S-45ABGY | ETC |
获取价格 |
RF FET LDMOS 65V 35DB SOT12122 |
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BLM8G0710S-45ABY | ETC |
获取价格 |
RF FET LDMOS 65V 35DB SOT12112 |
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BLM8G0710S-60PBGY | ETC |
获取价格 |
RF FET LDMOS 65V 36.2DB SOT12122 |
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BLM8G0710S-60PBY | ETC |
获取价格 |
RF FET LDMOS 65V 36.2DB SOT12112 |
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BLM90N10L | BELLING |
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BLM90N10L uses advanced trench technology and design to provide excellent RDS(ON) with low |
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BLM9435 | BELLING |
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"This device is produced with high cell density, DMOS trench technology, which is especial |
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BLM9D0708-05AM | AMPLEON |
获取价格 |
LDMOS 1-stage integrated Doherty MMIC |
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BLM9D0910-05AM | AMPLEON |
获取价格 |
LDMOS 1-stage integrated Doherty MMIC |
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