Datasheet > BLM9D2325-20ABZ

BLM9D2325-20ABZ

更新时间： 2024-09-10 22:07:43

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描述
RF MOSFET LDMOS SOT1462-1

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BLM9D2325-20ABZ 数据手册

BLM9D2325-20AB

LDMOS 2-stage integrated Doherty MMIC

Rev. 1 — 24 July 2017

Product data sheet

1. Product profile

1.1 General description

The BLM9D2325-20AB is a 2-stage fully integrated Doherty MMIC solution using

Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device,

input splitter and output combiner are integrated in a single package. This multiband

device is perfectly suited as a final device in massive MIMO or small cell applications in

the frequency range from 2300 MHz to 2500 MHz. Available in PQFN outline.

Table 1.

Application performance

Typical RF performance at T_case= 25 C; I_Dq= 39 mA (driver and final stages);

V_GSq(peaking)= V_GSq(carrier) 0.50 V. Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at

0.01 % probability on CCDF.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR_5M

(dBc)

(MHz)

2350

(dB)

27.1

(%)

42.1

single carrier W-CDMA

3.55

36.3

1.2 Features and benefits

 Integrated input splitter

 Integrated output combiner

 Very high efficiency thanks to asymmetry

 Designed for broadband operation (frequency 2300 MHz to 2500 MHz)

 Independent control of carrier and peaking bias

 Integrated ESD protection

 Excellent thermal stability

 Source impedance 50 ; high power gain

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications

 RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 2300 MHz to 2500 MHz frequency range.

12 3 4 5 6 7...16

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