Datasheet > BLM9D2527-20ABZ

BLM9D2527-20ABZ

更新时间： 2024-09-10 22:07:43

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描述
RF MOSFET LDMOS SOT1462-1

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BLM9D2527-20ABZ 数据手册

BLM9D2527-20AB

LDMOS 2-stage integrated Doherty MMIC

Rev. 1 — 29 June 2017

Product data sheet

1. Product profile

1.1 General description

The BLM9D2527-20AB is a 2-stage fully integrated Doherty MMIC solution using

Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device,

input splitter and output combiner are integrated in a single package. This multiband

device is perfectly suited as a final device in massive MIMO or small cell applications in

the frequency range from 2500 MHz to 2700 MHz. Available in PQFN outline.

Table 1.

Performance

Typical RF performance at T_case= 25 C; I_Dq= 43 mA (driver and final stages);

V_GSq(peaking)= V_GSq(carrier) 0.75 V. Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at

0.01 % probability on CCDF.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR_5M

(dBc)

(MHz)

2620

(dB)

27.3

(%)

46.1

single carrier W-CDMA

3.8

33.3

1.2 Features and benefits

 Integrated input splitter

 Integrated output combiner

 Very high efficiency thanks to asymmetry

 Designed for broadband operation (frequency 2500 MHz to 2700 MHz)

 Independent control of carrier and peaking bias

 Integrated ESD protection

 Excellent thermal stability

 Source impedance 50 ; high power gain

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications

 RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 2500 MHz to 2700 MHz frequency range.

12 3 4 5 6 7...17

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