Datasheet > BLM11N15

BLM11N15

更新时间： 2024-10-15 17:01:55

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
8页	840K
描述
BLM11N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM11N15 数据手册

BLM11N15

Power MOSFET

1．Description

BLM11N15 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. It can be used in a wide variety of

applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

R_DS(ON).Typ

FEATURES

Value

150

100

Unit

mΩ



High power and current handing capability

Lead free product is acquired

100% avalanche tested

RoHS product

APPLICATIONS



Load switch



Power management

TO-220 Top View

ORDERING INFORMATION

Device Marking Ordering Codes

Package Product Code

TO-220 BLM11N15

Packing

Tube

M11N15

BLM11N15-P

XXXX：Device Marking

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BLM11N15:150V 10mΩ

(2)P:TO-220

BLM11N15

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Rev 1.0

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11/2023

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