Datasheet > BLP10H630PY

BLP10H630PY

更新时间： 2024-11-24 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
15页	1762K
描述
RF MOSFET LDMOS 50V 4-HSOPF

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中文翻译

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BLP10H630PY 数据手册

BLP10H630P; BLP10H630PG

Power LDMOS transistor

Rev. 1 — 20 December 2016

Product data sheet

1. Product profile

1.1 General description

A 30 W LDMOS power transistor for broadcast and industrial applications in the HF to

1000 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

720

(W)

(dB)

(%)

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 1000 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...15

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