Datasheet > BLP15H9S10G

BLP15H9S10G

更新时间： 2024-11-25 17:14:59

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
16页	1376K
描述
Power LDMOS transistor

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BLP15H9S10G 数据手册

BLP15H9S10; BLP15H9S10G

Power LDMOS transistor

Rev. 4 — 12 January 2023

Product data sheet

1. Product profile

1.1 General description

A 10 W LDMOS driver transistor for broadcast and industrial applications. The excellent

ruggedness of this device makes it ideal for digital and analog transmitter applications in

the frequency range from HF to 2 GHz.

Table 1.

Typical performance

Test signal

V_DS

(V)

P_L

(W)

G_p

(dB)

_D

(%)

(MHz)

1400

pulsed RF

1030 to 1090

360 to 450

1.2 Features and benefits

 Designed for broadband operation

 High efficiency

 Integrated dual sided ESD protection

 Excellent ruggedness

 High power gain

 Excellent reliability

 Easy power control

 Excellent stability

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Broadcast transmitter applications

 Industrial, scientific and medical applications

 Applicable at frequencies from HF to 2 GHz

12 3 4 5 6 7...16

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