品牌 | Logo | 应用领域 |
上海贝岭 - BELLING | / | |
页数 | 文件大小 | 规格书 |
11页 | 929K | |
描述 | ||
BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BLP-21.4 | MINI |
获取价格 |
Low Pass Filter, 24.5MHz, CASE FF55 | |
BLP-21.4-75 | MINI |
获取价格 |
Low Pass Filter, 24.5MHz, CASE FF55 | |
BLP-250 | MINI |
获取价格 |
Low Pass Filter, 250MHz, CASE FF55 | |
BLP-250+ | MINI |
获取价格 |
Low Pass Filter, 250MHz, ROHS COMPLIANT, CASE FF55 | |
BLP25M705 | NXP |
获取价格 |
Broadband LDMOS driver transistor | |
BLP25M705F | NXP |
获取价格 |
BLP25M705 | |
BLP25M705Z | ETC |
获取价格 |
RF FET LDMOS 65V 16DB 12VDFN | |
BLP25M710 | NXP |
获取价格 |
TRANSISTOR RF POWER TRANSISTOR, BIP RF Power | |
BLP25M710F | NXP |
获取价格 |
BLP25M710 | |
BLP25M710Z | NXP |
获取价格 |
BLP25M710 |