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BLP20N10L PDF预览

BLP20N10L

更新时间: 2024-11-08 14:55:55
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
11页 929K
描述
BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.

BLP20N10L 数据手册

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BLP20N10L  
MOSFET  
,
1Description  
BLP20N10L, the N-channel Enhanced Power  
MOSFETs, is obtained by advanced double trench  
technology which reduce the conduction loss, and  
improve switching performance. This is suitable  
device for LED backlighting and high speed  
switching applications.  
KEY CHARACTERISTICS  
Parameter  
VDSS  
Value  
100  
30.5  
16  
Unit  
V
ID  
A
RDS(on).typ@10V  
mΩ  
mΩ  
RDS(on).typ@4.5V  
25  
TO-252  
FEATURES  
Fast Switching  
Low On-Resistance  
Low Gate Charge  
Low Reverse transfer capacitances  
High avalanche ruggedness  
RoHS product  
APPLICATIONS  
Switching applications  
LED backlighting  
ORDERING INFORMATION  
Ordering Codes  
BLP20N10L-D  
Package  
TO-252  
Product Code  
P20N10L  
Packing  
Reel  
XXXXProduct Code  
YYWWYear&Week  
BLP20N10L-D  
(2) Package type  
(1) Chip name  
XXXX  
YYWW ZZ  
SSSSS  
ZZAssembly Code  
SSSSSLot Code  
(1) BLP20N10L20mΩ/100V  
(2) DTO-252  
BLP20N10L  
www.belling.com.cn  
Rev1.1  
8/2022  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  

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