Datasheet > BLP35M805Z

BLP35M805Z

更新时间： 2024-09-17 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	1093K
描述
RF FET LDMOS 65V 18DB 16VDFN

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中文翻译

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数据手册

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BLP35M805Z 数据手册

BLP35M805

Power LDMOS transistor

Rev. 1 — 24 February 2016

Product data sheet

1. Product profile

1.1 General description

5 W LDMOS power transistor for broadcast, ISM and A&D applications at frequencies

from HF to 3500 MHz.

The BLP35M805 driver is designed for high power CW applications and is assembled in a

high performance thermally enhanced plastic package.

Table 1.

Typical performance

RF performance at V_DS= 32 V; I_Dq= 50 mA; T_case= 25 C in a class-AB application circuit.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(%)

(MHz)

2450

3500

(mA)

(dB)

100

9.6

1.2 Features and benefits

 High efficiency

 High power gain

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Designed for broadband operation (HF to 3500 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Broadcast, ISM and A&D applications in the frequency range from HF to 3500 MHz

12 3 4 5 6 7...11

中文翻译

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