Datasheet > BLP27M810Z

BLP27M810Z

更新时间： 2024-09-17 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	1071K
描述
RF FET LDMOS 65V 17DB 16VDFN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLP27M810Z 数据手册

BLP27M810

Power LDMOS transistor

Rev. 1 — 11 February 2016

Product data sheet

1. Product profile

1.1 General description

10 W LDMOS power transistor for broadcast and Industrial, Scientific and Medical (ISM)

applications at frequencies from HF to 2700 MHz.

The BLP27M810 driver is designed for high power CW applications and is assembled in a

high performance thermally enhanced plastic package.

Table 1.

Typical performance

RF performance at V_DS= 32 V; I_Dq= 100 mA; T_case= 25 C in a class-AB application circuit.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

2450

2700

(mA)

100

110

(dB)

18.4

(%)

50.6

Pulsed CW

1.2 Features and benefits

 High efficiency

 High power gain

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Designed for broadband operation (HF to 2700 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Broadcast and Industrial, Scientific and Medical applications in the frequency range

from HF to 2700 MHz

12 3 4 5 6 7...11

中文翻译

下载PDF

与BLP27M810Z相关器件

型号	品牌	获取价格	描述	数据表
BLP-30+	MINI	获取价格	Low Pass Filter
BLP-300	MINI	获取价格	Low Pass Filter
BLP-300+	MINI	获取价格	Low Pass Filter
BLP30-1005G	POWER-ONE	获取价格	30 Watts
BLP30-1012G	POWER-ONE	获取价格	30 Watts
BLP30-1024G	POWER-ONE	获取价格	30 Watts
BLP30-3000G	POWER-ONE	获取价格	30 Watts
BLP3062	BELLING	获取价格	BLP3062
BLP-30-75+	MINI	获取价格	Low Pass Filter, 35MHz, ROHS COMPLIANT, CASE FF55
BLP35M805Z	ETC	获取价格	RF FET LDMOS 65V 18DB 16VDFN