Datasheet > BLP06N08G

BLP06N08G

更新时间： 2024-09-18 14:55:19

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	985K
描述
BLP06N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

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BLP06N08G 数据手册

BLP06N08G

MOSFET

1．Description

BLP06N08G, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

Ⅱ technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for motor

drivers and high speed switching applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

FEATURES

TO-263



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Switching applications

Motor drivers

TO-220



ORDERING INFORMATION

Ordering Codes

BLP06N08G-B

BLP06N08G-P

Product Code

Package

Device Marking

P06N08G

Packing

Reel

BLP06N08G

TO-263

TO-220

P06N08G

Tube

XXXX：Device Marking

BLP06N08G-B

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS VV

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

VV：Classification

(1) BLP06N08G：6mΩ/80V

(2) B：TO-263

P：TO-220

BLP06N08G

Rev1.0

6/2023

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