Datasheet > BLP065N08G

BLP065N08G

更新时间： 2024-11-26 14:54:31

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	962K
描述
BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications.

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BLP065N08G 数据手册

BLP065N08G

1．Description

BLP065N08G, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for motor

drivers and high speed switching applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

5.4

FEATURES

TO-263



Fast Switching



Low On-Resistance ( R_DS(on)≤6.5mΩ )



Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Switching applications

Motor drivers

TO-220



ORDERING INFORMATION

Ordering Codes

BLP065N08G-B

BLP065N08G-P

Package

Product Code

Packing

Reel

TO-263

TO-220

P065N08G

Tube

XXXX：Product Code

BLP065N08G-B

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS VV

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

VV：Classification

(1) BLP065N08G：6.5mΩ/85V

(2) B：TO-263

P：TO-220

BLP065N08G

www.belling.com.cn

Rev2.0

6/2022

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...12

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