Datasheet > BLP065N08G

BLP065N08G

更新时间： 2023-12-06 20:08:22

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	962K
描述
BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications.

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BLP065N08G 数据手册

BLP065N08G

Figure 8. Drain-Source On-Resistance vs Drain

Current

Figure 9. Normalized On-Resistance vs Junction

Temperature

Figure 10. Normalized Threshold Voltage vs

Junction Temperature

Figure 11. Normalized Breakdown Voltage vs

Junction Temperature

BLP065N08G

Rev2.0

6/2022

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型号	品牌	描述	获取价格	数据表
BLP065N08GL	BELLING	BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t	获取价格
BLP065N10GL	BELLING	BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t	获取价格
BLP06N08G	BELLING	BLP06N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP075N10G	BELLING	BLP075N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te	获取价格
BLP075N10GL	BELLING	BLP075N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t	获取价格
BLP08N10G	BELLING	BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格