Datasheet > BLP065N08G

BLP065N08G

更新时间： 2023-12-06 20:08:22

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	962K
描述
BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications.

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BLP065N08G 数据手册

BLP065N08G

2．ABSOLUTE RATINGS

at T_C=25°C，unless otherwise specified

Symbol

V_DSS

Parameter

Rating

Units

Drain-Source Voltage

Continuous Drain Current, Silicon Limited

Continuous Drain Current, Package Limited

Continuous Drain Current @T_C=100°C , Silicon Limited

Pulsed Drain Current

118

I_D

Note1

320

I_DM

Gate-Source Voltage

±20

196

V_GS

Note2

Avalanche Energy

E_AS

Power Dissipation

156.2

P_D

Derating Factor above 25°C

1.25

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

150，–55 to 150

260

T_J，T_stg

T_L

Note1：Repetitive Rating：Pulse width limited by maximum junction temperature

Note2：L=0.5mH, Ias=28A, Start T_J=25℃

3．Thermal characteristics

Symbol

Parameter

Max

0.8

Units

℃/W

thermal resistance, Junction-Case

R_θJC

thermal resistance, Junction-Ambient

62.5

℃/W

R_θJA

4．Electrical Characteristics

at T_C=25°C, unless otherwise specified

OFF Characteristics

Values

Symbol

V_DSS

Parameter

Test Conditions

Units

Min

Typ

Max

Drain-Source Breakdown

Voltage

V_GS=0V, I_D=250µA

V_DS=85V, V_GS=0V

µA

Drain-Source Leakage Current

I_DSS

V_DS=68V, V_GS=0V

@T_C=125°C

100

Gate-Source Forward Leakage

Gate-Source Reverse Leakage

V_GS=+20V

V_GS=-20V

100

I_GSS(F)

I_GSS(R)

-100

BLP065N08G

Rev2.0

6/2022

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