Datasheet > BLP05M7200

BLP05M7200

更新时间： 2024-11-05 12:50:39

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
9页	97K
描述
Power LDMOS transistor

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BLP05M7200 数据手册

BLP05M7200

Power LDMOS transistor

Rev. 1 — 6 September 2012

Objective data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for various applications such as ISM and RF plasma

lighting at frequencies from 425 MHz to 450 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 C in a common source class-AB production test circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

440

(dB)

(%)

200

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for ISM operation (425 MHz to 450 MHz)

 Input integration for simple board design

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for CW applications in the 425 MHz to 450 MHz frequency range

such as ISM and RF plasma lighting.

12 3 4 5 6 7...9

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