Datasheet > BLP05N08G

BLP05N08G

更新时间： 2024-11-06 14:53:35

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	1416K
描述
BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications.

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BLP05N08G 数据手册

BLP05N08G

MOSFET

1．Description

BLP05N08G, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for

Synchronous rectifiers and high speed switching

applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

4.5

FEATURES



Fast Switching

Low On-Resistance ( R_DS(on)≤5mΩ )

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS

PDFN 5×6



Switching applications

Synchronous rectifiers



ORDERING INFORMATION

Ordering Codes

BLP05N08G-Q

Package

Product Code

P05N08G

Packing

Reel

PDFN 5×6

XXXX：Product Code

YYWW：Year&Week

BLP05N08G-Q

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLP05N08G：5mΩ/85V

(2) Q：PDFN 5×6

BLP05N08G

Rev1.2

06/2022

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...11

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