Datasheet > BLP05N15

BLP05N15

更新时间： 2024-11-06 14:54:19

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	936K
描述
BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

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BLP05N15 数据手册

BLP05N15

MOSFET

1．Description

BLP05N15, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for motor

drivers and high current applications.

KEY CHARACTERISTICS

Parameter

Value

150

173

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

FEATURES



Fast Switching

Low On-Resistance ( R_DS(on)≤5mΩ )

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Motor drivers



High current applications

ORDERING INFORMATION

Ordering Codes

BLP05N15-B

BLP05N15-P

Product Code

Package

TO-263

TO-220

Device Marking

Packing

Reel

BLP05N15

P05N15

Tube

BLP05N15-B

(2) Package type

(1) Chip name

(1) BLP05N15：5mΩ/150V

(2) B：TO-263

P：TO-220

BLP05N15

Rev1.0

09/2023

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