Datasheet > BLP05M7200Y

BLP05M7200Y

更新时间： 2024-11-05 22:07:43

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描述
RF FET LDMOS 65V 21DB SOT1138

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BLP05M7200Y 数据手册

BLP05M7200

Power LDMOS transistor

Rev. 5 — 27 June 2017

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for various applications such as ISM and RF plasma

lighting at frequencies from 425 MHz to 450 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 C, I_Dq= 2 mA in an application circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

440

(dB)

(%)

210

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Easy power control

 Designed for ISM operation (425 MHz to 450 MHz)

 Input integration for simple board design

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for CW applications in the 425 MHz to 450 MHz frequency range

such as ISM and RF plasma lighting.

12 3 4 5 6 7...10

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