Datasheet > BLP05H9S500P

BLP05H9S500P

更新时间： 2024-11-06 17:15:39

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
13页	1547K
描述
Power LDMOS transistor

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数据手册

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BLP05H9S500P 数据手册

BLP05H9S500P

Power LDMOS transistor

Rev. 1 — 10 September 2019

Product data sheet

1. Product profile

1.1 General description

500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting

and defrosting at frequencies from 423 MHz to 443 MHz.

Table 1.

Typical performance

RF performance at V_DS= 50 V; I_Dq= 50 mA in a class-AB application circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

433

(W)

500

(dB)

25.3

25.6

(%)

CW pulsed ^[1]

75.8

[1] t_p= 100 s;  = 10 %.

1.2 Features and benefits

 High efficiency

 Easy power control

 Excellent ruggedness

 Integrated ESD protection

 Designed for ISM operation (423 MHz to 443 MHz)

 Excellent thermal stability

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 RF power amplifiers for CW and pulsed CW applications in the 423 MHz to 443 MHz

frequency range such as ISM, RF plasma lighting and defrosting

12 3 4 5 6 7...13

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