Datasheet > BLP04N08

BLP04N08

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	1013K
描述
BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

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BLP04N08 数据手册

BLP04N08

MOSFET

1．Description

BLP04N08, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

V_DSS

I_D

120

mΩ

R_DS(on).typ

FEATURES



Fast Switching



Low On-Resistance ( R_DS(on)≤4mΩ )



Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



BMS



Motor drivers

ORDERING INFORMATION

Ordering Codes

BLP04N08-BA

Package

Product Code

P04N08

Packing

Reel

TO-263-7

XXXXX：Product Code

BLP04N08-B

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLP04N08：4mΩ/85V

(2) BA: TO-263-7

BLP04N08

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1.0

01/2021

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