Datasheet > BLP05H6110XRY

BLP05H6110XRY

更新时间： 2024-11-05 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
16页	1371K
描述
RF FET LDMOS 135V 27DB SOT12232

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLP05H6110XRY 数据手册

BLP05H6110XR;

BLP05H6110XRG

Power LDMOS transistor

Rev. 4 — 30 August 2016

Product data sheet

1. Product profile

1.1 General description

A 110 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 600 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

108

(W)

110

(dB)

(%)

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated double sided ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...16

中文翻译

下载PDF

与BLP05H6110XRY相关器件

型号	品牌	获取价格	描述	数据表
BLP05H6150XR	NXP	获取价格	RF POWER, FET
BLP05H6150XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H6150XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232
BLP05H6200XR	NXP	获取价格	RF POWER, FET
BLP05H6250XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H6250XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232
BLP05H6350XR	NXP	获取价格	POWER, FET
BLP05H6350XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H6350XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232
BLP05H635XR	NXP	获取价格	RF POWER, FET