Datasheet > BLP05H6150XR

BLP05H6150XR

更新时间： 2024-11-05 18:15:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	1243K
描述
RF POWER, FET

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技术参数
数据手册

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BLP05H6150XR 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

BLP05H6150XR 数据手册

BLP05H6150XR

Power LDMOS transistor

Rev. 3 — 8 January 2016

Product data sheet

1. Product profile

1.1 General description

A 150 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 600 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

(dB)

_D

(%)

ACPR

(MHz)

108

(W)

150

100

150

(dBc)

pulsed RF

1.8 to 30

135

174 to 230

DVB-T

36

1.2 Features and benefits

 Easy power control

 Integrated double sided ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...14

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与BLP05H6150XR相关器件

型号	品牌	获取价格	描述	数据表
BLP05H6150XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H6150XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232
BLP05H6200XR	NXP	获取价格	RF POWER, FET
BLP05H6250XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H6250XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232
BLP05H6350XR	NXP	获取价格	POWER, FET
BLP05H6350XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H6350XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232
BLP05H635XR	NXP	获取价格	RF POWER, FET
BLP05H635XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242