Datasheet > BLP05H6200XR

BLP05H6200XR

更新时间： 2024-11-05 19:09:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
9页	668K
描述
RF POWER, FET

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技术参数
数据手册

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BLP05H6200XR 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.76	Base Number Matches：	1

BLP05H6200XR 数据手册

BLP05H6200XR

Power LDMOS transistor

Rev. 2 — 1 September 2015

Objective data sheet

1. Product profile

1.1 General description

A 200 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 600 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

108

(W)

200

(dB)

(%)

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...9

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