5秒后页面跳转
BLP05H6200XR PDF预览

BLP05H6200XR

更新时间: 2024-11-06 19:09:59
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
9页 668K
描述
RF POWER, FET

BLP05H6200XR 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.76Base Number Matches:1

BLP05H6200XR 数据手册

 浏览型号BLP05H6200XR的Datasheet PDF文件第2页浏览型号BLP05H6200XR的Datasheet PDF文件第3页浏览型号BLP05H6200XR的Datasheet PDF文件第4页浏览型号BLP05H6200XR的Datasheet PDF文件第5页浏览型号BLP05H6200XR的Datasheet PDF文件第6页浏览型号BLP05H6200XR的Datasheet PDF文件第7页 
BLP05H6200XR  
Power LDMOS transistor  
Rev. 2 — 1 September 2015  
Objective data sheet  
1. Product profile  
1.1 General description  
A 200 W extremely rugged LDMOS power transistor for broadcast and industrial  
applications in the HF to 600 MHz band.  
Table 1.  
Application information  
Test signal  
f
VDS  
(V)  
50  
PL  
Gp  
D  
(MHz)  
108  
(W)  
200  
(dB)  
28  
(%)  
75  
pulsed RF  
1.2 Features and benefits  
Easy power control  
Integrated ESD protection  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (HF to 600 MHz)  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
Industrial, scientific and medical applications  
Broadcast transmitter applications  

与BLP05H6200XR相关器件

型号 品牌 获取价格 描述 数据表
BLP05H6250XRGY ETC

获取价格

RF FET LDMOS 135V 27DB SOT12242
BLP05H6250XRY ETC

获取价格

RF FET LDMOS 135V 27DB SOT12232
BLP05H6350XR NXP

获取价格

POWER, FET
BLP05H6350XRGY ETC

获取价格

RF FET LDMOS 135V 27DB SOT12242
BLP05H6350XRY ETC

获取价格

RF FET LDMOS 135V 27DB SOT12232
BLP05H635XR NXP

获取价格

RF POWER, FET
BLP05H635XRGY ETC

获取价格

RF FET LDMOS 135V 27DB SOT12242
BLP05H635XRY ETC

获取价格

RF FET LDMOS 135V 27DB SOT12232
BLP05H6700XRGY ETC

获取价格

RF MOSFET LDMOS 50V 4-HSOP
BLP05H6700XRY ETC

获取价格

RF MOSFET LDMOS 50V SOT1138-2