Datasheet > BLP04N10

BLP04N10

更新时间： 2024-11-06 14:53:39

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	1017K
描述
BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

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BLP04N10 数据手册

BLP04N10

MOSFET

1．Description

BLP04N10, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

100

120

3.3

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

FEATURES

TO-263



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



BMS

TO-220



High current switching applications

ORDERING INFORMATION

Ordering Codes

BLP04N10-B

BLP04N10-P

Package

Product Code

P04N10

Packing

Reel

TO-263

TO-220

P04N10

Tube

XXXXX：Product Code

BLP04N10-B

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS VV

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

VV：Classification

(1) BLP04N10：4mΩ/100V

(2) B：TO-263

P：TO-220

BLP04N10

Rev1.0

10/2022

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