Datasheet > BLP055N10

BLP055N10

更新时间： 2024-11-06 14:54:27

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	976K
描述
BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications.

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BLP055N10 数据手册

BLP055N10

MOSFET

1．Description

BLP055N10, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss, improve

switching performance and enhance the avalanche

energy. This is suitable device for Synchronous

rectification and high speed switching applications.

KEY CHARACTERISTICS

Parameter

Value

100

120

4.8

Unit

V_DSS

I_D

TO-220

mΩ

R_{DS(on)@10V.typ}

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Synchronous rectification



High speed switching applications

ORDERING INFORMATION

Ordering Codes

BLP055N10-P

BLP055N10-B

Package

Product Code

P055N10

Packing

Tube

TO-220

TO-263

P055N10

Reel

XXXX：Product Code

BLP055N10-P

XXXX

YYWW ZZ

SSSSS VV

(2) Package type

(1) Chip name

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

VV：Classification

(1)BLP055N10 5.5mΩ/100V

(2) P：TO-220

B：TO-263

BLP055N10

www.belling.com.cn

Rev1.0

6/2022

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...12

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