Datasheet > BLP05H6110XRGY

BLP05H6110XRGY

更新时间： 2024-11-05 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
16页	1371K
描述
RF FET LDMOS 135V 27DB SOT12242

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BLP05H6110XRGY 数据手册

BLP05H6110XR;

BLP05H6110XRG

Power LDMOS transistor

Rev. 4 — 30 August 2016

Product data sheet

1. Product profile

1.1 General description

A 110 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 600 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

108

(W)

110

(dB)

(%)

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated double sided ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...16

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