Datasheet > BLP02N08

BLP02N08

更新时间： 2024-11-06 14:54:51

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	953K
描述
BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLP02N08 数据手册

BLP02N08

MOSFET

1．Description

BLP02N08, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

V_DSS

I_D

180

1.6

mΩ

R_DS(on).typ

FEATURES



Fast Switching



Low On-Resistance ( R_DS(on)≤2mΩ )



Low Gate Charge

TO-247

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



BMS



High current switching applications

ORDERING INFORMATION

Ordering Codes

BLP02N08-F

Package

TO247

Product Code

P02N08

Packing

Tube

XXXXX：Product Code

BLP02N08-F

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLP02N08：2mΩ/85V

(2) F：TO247

BLP02N08

www.belling.com.cn

Rev 1.0

5/2022

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...11

中文翻译

下载PDF

与BLP02N08相关器件

型号	品牌	获取价格	描述	数据表
BLP032N08	BELLING	获取价格	BLP032N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec
BLP036N08	BELLING	获取价格	BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec
BLP038N10GL	BELLING	获取价格	BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t
BLP039N08	BELLING	获取价格	BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec
BLP03N08	BELLING	获取价格	BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech
BLP03N10	BELLING	获取价格	BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech
BLP0408H9S30	AMPLEON	获取价格	Power LDMOS transistor
BLP0427M9S20	AMPLEON	获取价格	Power LDMOS transistor
BLP0427M9S20G	AMPLEON	获取价格	Power LDMOS transistor
BLP0427M9S20GZ	ETC	获取价格	BLP0427M9S20GZ/SOT1483/REELDP