Datasheet > BLP028N10

BLP028N10

更新时间： 2024-09-16 14:55:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	995K
描述
BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

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BLP028N10 数据手册

BLP028N10

MOSFET

1．Description

BLP028N10, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

100

180

2.4

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



BMS

High Current Switching Applications.



ORDERING INFORMATION

Ordering Codes

BLP028N10-B

BLP028N10-P

Package

Product Code

P028N10

Packing

Reel

TO-263

TO-220

P028N10

Tube

XXXXX：Product Code

YYWW：Year&Week

BLP028N10-B

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS VV

ZZ：Assembly Code

SSSSS：Lot Code

VV：Classification

(1) BLP028N10：2.8mΩ/100V

(2) B：TO-263

P：TO-220

BLP028N10

Rev1.0

11/2022

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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