Datasheet > BLP023N10

BLP023N10

更新时间： 2023-12-06 20:03:05

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	948K
描述
BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLP023N10 数据手册

BLP023N10

MOSFET

1．Description

BLP023N10, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

100

180

1.8

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



BMS

High Current Switching Applications.



ORDERING INFORMATION

Ordering Codes

BLP023N10-B

BLP023N10-P

Package

Product Code

P023N10

Packing

Reel

TO-263

TO-220

P023N10

Tube

XXXXX：Product Code

YYWW：Year&Week

BLP023N10-B

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS VV

ZZ：Assembly Code

SSSSS：Lot Code

VV：Classification

(1) BLP023N10：2.3mΩ/100V

(2) B：TO-263

P：TO-220

BLP023N10

www.belling.com.cn

Rev1.1

5/2022

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...12

下载PDF

与BLP023N10相关器件

型号	品牌	描述	获取价格	数据表
BLP0240	BELLING	BLP0240	获取价格
BLP024N10	BELLING	BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP025N10	BELLING	BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP026N08	BELLING	BLP026N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP028N10	BELLING	BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP02N06	BELLING	BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech	获取价格