Datasheet > BLP036N08

BLP036N08

更新时间： 2024-11-07 14:53:31

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	997K
描述
BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

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BLP036N08 数据手册

BLP036N08

MOSFET

1．Description

BLP036N08, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench Ⅱ

technology which reduce the conduction loss, improve

switching performance and enhance the avalanche

energy. This is suitable device for Synchronous

rectification and high speed switching applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

TO-220

V_DSS

I_D

120

3.2

mΩ

R_{DS(on)@10V.typ}

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Synchronous rectification



High speed switching applications

ORDERING INFORMATION

Ordering Codes

BLP036N08-P

BLP036N08-B

Product Code

Package

Device Marking

Packing

Tube

BLP036N08

TO-220

TO-263

P036N08

Reel

XXXX：Device Marking

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

BLP036N08-P

XXXX

YYWW ZZ

SSSSS

(2) Package type

(1) Chip name

(1)BLP036N08 3.6mΩ/80V

(2) P：TO-220 B：TO-263

BLP036N08

Rev1.0

3/2023

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