Datasheet > BLP03N10

BLP03N10

更新时间： 2024-11-07 14:54:51

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	959K
描述
BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

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BLP03N10 数据手册

BLP03N10

MOSFET

1．Description

BLP03N10, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

100

180

2.7

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

TO-247

APPLICATIONS



BMS



High current switching applications

ORDERING INFORMATION

Ordering Codes

BLP03N10-F

Package

TO-247

Product Code

P03N10

Packing

Tube

XXXXX：Product Code

BLP03N10-F

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLP03N10：3mΩ/100V

(2)F：TO-247

BLP03N10

www.belling.com.cn

Rev1.0

5/2022

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...11

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