型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BLP0427M9S20 | AMPLEON |
获取价格 |
Power LDMOS transistor | |
BLP0427M9S20G | AMPLEON |
获取价格 |
Power LDMOS transistor | |
BLP0427M9S20GZ | ETC |
获取价格 |
BLP0427M9S20GZ/SOT1483/REELDP | |
BLP0427M9S20Z | ETC |
获取价格 |
BLP0427M9S20Z/SOT1482/REELDP | |
BLP042N10G | BELLING |
获取价格 |
BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te | |
BLP042N15J | BELLING |
获取价格 |
BLP042N15J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te | |
BLP045N10 | BELLING |
获取价格 |
BLP045N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | |
BLP04N08 | BELLING |
获取价格 |
BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech | |
BLP04N10 | BELLING |
获取价格 |
BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech | |
BLP055N09G | BELLING |
获取价格 |
BLP055N09G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te |