Datasheet > BLP0427M9S20GZ

BLP0427M9S20GZ

更新时间： 2024-09-16 22:07:43

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页数	文件大小	规格书
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描述
BLP0427M9S20GZ/SOT1483/REELDP

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BLP0427M9S20GZ 数据手册

BLP0427M9S20;

BLP0427M9S20G

Power LDMOS transistor

Rev. 2 — 16 July 2021

Product data sheet

1. Product profile

1.1 General description

20 W plastic LDMOS power transistor for general purpose applications at frequencies

from 400 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies)

Typical RF performance at T_case= 25 C; I_Dq= 180 mA; in a class-AB demo board, tested on

gull wing lead device.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

P_L(1dB)

(dBm)

G_p

(dB)

_D

(MHz)

(mA)

100

180

150

(dBm)

(%)

>55

pulsed

1-carrier

960 to 1215

1805 to 1880

30 to 512

>50

Table 2.

Application performance

Typical RF performance at T_case= 25 C; V_DS= 28 V; I_Dq= 100 mA; t_p= 300 s;  = 10 %; in a

class-AB demo board, tested on straight lead device.

Test signal

P_L

G_p

P_L(1dB)

(dBm)

_D

RL_in

(dB)

9

(MHz)

(dBm)

(dB)

(%)

pulsed RF

1200 to 1400

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for broadband operation

 Excellent thermal stability

 High power gain

 Integrated ESD protection

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Radars & avionics

 Communications

 Broadcast transmitter applications

 Industrial, scientific and medical applications

12 3 4 5 6 7...19

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