Datasheet > BLP038N10GL

BLP038N10GL

更新时间： 2024-11-26 14:55:39

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	938K
描述
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.

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BLP038N10GL 数据手册

BLP038N10GL

MOSFET

1．Description

BLP038N10GL, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss, improve

switching performance and enhance the avalanche

energy. This is suitable device for Synchronous

rectification and high speed switching applications.

KEY CHARACTERISTICS

Parameter

V_DSS

Value

100

120

3.3

Unit

I_D

mΩ

R_{DS(on)@10V.typ}

R_{DS(on)@4.5V.typ}

4.5

FEATURES

TO-252



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Synchronous rectification



High speed switching applications

ORDERING INFORMATION

Ordering Codes

BLP038N10GL-D

Package

TO-252

Product Code

Packing

Reel

P038N10GL

XXXX：Product Code

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

BLP038N10GL-D

XXXX

YYWW ZZ

SSSSS

(2) Package type

(1) Chip name

(1)BLP038N10GL 3.8mΩ/100V

(2) D：TO-252

BLP038N10GL

Rev1.0

11/2022

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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