Datasheet > BLP038N10GL

BLP038N10GL

更新时间： 2024-09-17 14:55:39

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	938K
描述
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLP038N10GL 数据手册

BLP038N10GL

MOSFET

1．Description

BLP038N10GL, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss, improve

switching performance and enhance the avalanche

energy. This is suitable device for Synchronous

rectification and high speed switching applications.

KEY CHARACTERISTICS

Parameter

V_DSS

Value

100

120

3.3

Unit

I_D

mΩ

R_{DS(on)@10V.typ}

R_{DS(on)@4.5V.typ}

4.5

FEATURES

TO-252



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Synchronous rectification



High speed switching applications

ORDERING INFORMATION

Ordering Codes

BLP038N10GL-D

Package

TO-252

Product Code

Packing

Reel

P038N10GL

XXXX：Product Code

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

BLP038N10GL-D

XXXX

YYWW ZZ

SSSSS

(2) Package type

(1) Chip name

(1)BLP038N10GL 3.8mΩ/100V

(2) D：TO-252

BLP038N10GL

Rev1.0

11/2022

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...11

中文翻译

下载PDF

与BLP038N10GL相关器件

型号	品牌	获取价格	描述	数据表
BLP039N08	BELLING	获取价格	BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec
BLP03N08	BELLING	获取价格	BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech
BLP03N10	BELLING	获取价格	BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech
BLP0408H9S30	AMPLEON	获取价格	Power LDMOS transistor
BLP0427M9S20	AMPLEON	获取价格	Power LDMOS transistor
BLP0427M9S20G	AMPLEON	获取价格	Power LDMOS transistor
BLP0427M9S20GZ	ETC	获取价格	BLP0427M9S20GZ/SOT1483/REELDP
BLP0427M9S20Z	ETC	获取价格	BLP0427M9S20Z/SOT1482/REELDP
BLP042N10G	BELLING	获取价格	BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te
BLP042N15J	BELLING	获取价格	BLP042N15J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te