Datasheet > BLP02N06

BLP02N06

更新时间： 2024-11-06 14:53:27

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	1112K
描述
BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

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BLP02N06 数据手册

BLP02N06

MOSFET

1．Description

BLP02N06, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss, improve

switching performance and enhance the avalanche

energy. This is suitable device for Synchronous

rectification and high speed switching applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

V_DSS

I_D

TO-252

mΩ

R_{DS(on)@10V.typ}

2.3

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Synchronous rectification



High speed switching applications

ORDERING INFORMATION

Ordering Codes

BLP02N06-D

Product Code

Package

Device Marking

P02N06

Packing

Reel

BLP02N06

TO-252

XXXX：Device Marking

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

BLP02N06-D

XXXX

YYWW ZZ

SSSSS

(2) Package type

(1) Chip name

(1)BLP02N06 2.3mΩ/60V

(2) D：TO-252

BLP02N06

Rev1.0

05/2023

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...11

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