Datasheet > BLP026N08

BLP026N08

更新时间： 2024-09-16 14:55:51

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	1000K
描述
BLP026N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

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BLP026N08 数据手册

BLP026N08

MOSFET

1．Description

BLP026N08, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

V_DSS

I_D

180

2.1

mΩ

R_DS(on).typ

FEATURES

TO-263



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



BMS

TO-220



High current switching applications

ORDERING INFORMATION

Ordering Codes

BLP022N08-B

BLP022N08-P

Product Code

Package

Device Marking

Packing

Reel

BLP022N08

TO-263

TO-220

P022N08

Tube

XXXXX：Device Marking

BLP026N08-B

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS VV

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

VV：Classification

(1) BLP026N08：2.6mΩ/80V

(2) B：TO-263

P：TO-220

BLP026N08

Rev1.0

12/2022

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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