Datasheet > BLP024N10

BLP024N10

更新时间： 2023-12-06 20:02:54

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	1104K
描述
BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLP024N10 数据手册

BLP024N10

MOSFET

1．Description

BLP024N10, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

100

223

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

TOLL8

APPLICATIONS



BMS



High current switching applications

ORDERING INFORMATION

Ordering Codes

BLP024N10-BA

BLP024N10-T

Package

Product Code

P024N10

Packing

Reel

TO-263-7

TOLL8

P024N10

Reel

XXXXX：Product Code

YYWW：Year&Week

BLP024N10-BA

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLP024N10：2.4mΩ/100V

(2) BA：TO-263-7

T：TOLL8

BLP024N10

Rev1.1

11/2022

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...12

下载PDF

与BLP024N10相关器件

型号	品牌	描述	获取价格	数据表
BLP025N10	BELLING	BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP026N08	BELLING	BLP026N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP028N10	BELLING	BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP02N06	BELLING	BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech	获取价格
BLP02N06L	BELLING	BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec	获取价格
BLP02N08	BELLING	BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech	获取价格