5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| BLP021N10 | BELLING |
获取价格 |
BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP022N08 | BELLING |
获取价格 |
BLP022N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP022N10 | BELLING |
获取价格 |
BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP023N10 | BELLING |
获取价格 |
BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP0240 | BELLING |
获取价格 |
BLP0240 |
|
| BLP024N10 | BELLING |
获取价格 |
BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP025N10 | BELLING |
获取价格 |
BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP026N08 | BELLING |
获取价格 |
BLP026N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP028N10 | BELLING |
获取价格 |
BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP02N06 | BELLING |
获取价格 |
BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
