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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| BLP021N10 | BELLING |
获取价格 |
BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP022N08 | BELLING |
获取价格 |
BLP022N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP022N10 | BELLING |
获取价格 |
BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP023N10 | BELLING |
获取价格 |
BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP0240 | BELLING |
获取价格 |
BLP0240 |
|
| BLP024N10 | BELLING |
获取价格 |
BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP025N10 | BELLING |
获取价格 |
BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP026N08 | BELLING |
获取价格 |
BLP026N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP028N10 | BELLING |
获取价格 |
BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec |
|
| BLP02N06 | BELLING |
获取价格 |
BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech |
|
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