Datasheet > BFR705L3RHE6327XTSA1

BFR705L3RHE6327XTSA1

更新时间： 2024-02-21 23:17:39

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器晶体管
页数	文件大小	规格书
7页	64K
描述
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, X Band, Silicon Germanium, NPN, 0.32 MM HEIGHT, ROHS COMPLIANT, FLAT LEADLESS, TSLP-3-9, 3 PIN

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BFR705L3RHE6327XTSA1 技术参数

BFR705L3RH

NPN Silicon Germanium RF Transistor*

• High gain ultra low noise RF transistor

for low current operation

• Ideal for low power consumption LNA design

• Provides outstanding performance for

a wide range of wireless applications

up to 10 GHz and more

• Outstanding noise figure F = 0.5 dB at 1.8 GHz

Outstanding noise figure F = 0.8 dB at 6 GHz

• High maximum stable and available gain at only 7mA

= 25 dB at 1.8 GHz, G = 18 dB at 6 GHz

• 150 GHz f -Silicon Germanium technology

• Extremely small and flat leadless package,

height 0.32 mm max.

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

2=C 3=E

Package

BFR705L3RH

TSLP-3-9

1=B

¹Pb-containing package may be available upon special request

2007-03-30

12 3 4 5 6 7

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