BFR740L3RH

更新时间： 2024-01-01 06:36:21

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号双极晶体管射频小信号双极晶体管放大器
页数	文件大小	规格书
11页	598K
描述
NPN Silicon Germanium RF Transistor

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中文翻译

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BFR740L3RH 技术参数

BFR740L3RH

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor

• Extremly small and flat leadless package,

height 0.32 mm, ideal for modules

• Provides outstanding performance for

wireless applications up to 10 GHz

• Ideal for WLAN applications,

including routers and access points

• Based on Infineon's reliable high volume

SiGe:C technology

• Outstanding noise figure NF

0.5 dB at 1.8 GHz

0.8 dB at 6 GHz

min

Outstanding noise figure NF

min

• Accurate SPICE GP model enables effective

design in process

• High maximum stable and available gain

Gms = 24.5 dB at 1.8 GHz, Gma = 15 dB at 6 GHz

• Pb-free (RoHS compliant) package

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR740L3RH

Marking

Pin Configuration

2=C 3=E

Package

TSLP-3-9

1=B

2010-09-08

12 3 4 5 6 7...11

中文翻译

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