Datasheet > BFR91G

BFR91G

更新时间： 2024-01-25 08:20:06

品牌	Logo	应用领域
美高森美 - MICROSEMI		开关晶体管
页数	文件大小	规格书
5页	117K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, M236, MACRO-T-3

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技术参数
数据手册

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BFR91G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	DISK BUTTON, O-CRDB-F3	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

BFR91G 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

BFR91

BFR91G

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

* G Denotes RoHS Compliant, Pb Free Terminal Finish

Features

High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA

Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz

High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz

Macro T

(STYLE #2)

DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in

applications requiring fast switching times.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Value

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

3.0

Thermal Data

Total Device Dissipation @ TA = 60ºC

Derate above 60ºC

180

2.0

mWatts

mW/ ºC

Tstg

Storage Temperature

-65 to +150

500

ºC

Total Device Dissipation @ TA = 60ºC

Derate above 60ºC

qJA

ºC/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

12 3 4 5

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