Datasheet > BFR92AF_08

BFR92AF_08

更新时间： 2024-01-27 10:07:09

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
5页	86K
描述
Silicon NPN Planar RF Transistor

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中文翻译

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BFR92AF_08 数据手册

Not for new design, this product will be obsoleted soon

BFR92AF

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 1 GHz. In the space-saving

3-pin surface-mount SOT-490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT-490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT-490 is also

reducing package inductances resulting in some bet-

16867

Electrostatic sensitive device.

Observe precautions for handling.

ter electrical performance. All of these aspects make

this device an ideal choice for demanding RF applica-

tions.

Applications

Wide band amplifier up to GHz range.

Mechanical Data

Typ: BFR92AF

Case: SOT-490 Plastic case

Weight: approx. 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Features

• High power gain

• Low noise figure

• High transition frequency

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Parts Table

Part

Marking

Package

BFR92AF

SOT-490

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

200

150

T_stg

-65 to +150

°C

Document Number 85098

Rev. 1.4, 05-Sep-08

www.vishay.com

12 3 4 5

中文翻译

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