BFR92AR-GELB

更新时间： 2024-02-26 21:11:54

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
9页	148K
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中文翻译

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数据手册

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BFR92AR-GELB 数据手册

BFR92/BFR92R

Vishay Telefunken

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

RF amplifier up to GHz range specially for wide band

antenna amplifier.

Features

High power gain

Low noise figure

High transition frequency

13 581

94 9280

9510527

BFR92 Marking: P1

BFR92R Marking: P4

Plastic case (SOT 23)

1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

CBO

CEO

EBO

≤ 60 C

tot

200

150

–65 to +150

amb

stg

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thJA

Value

450

Unit

K/W

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85032

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

1 (9)

12 3 4 5 6 7...9

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