Datasheet > BFR750L3RHE6327XTSA1

BFR750L3RHE6327XTSA1

更新时间： 2024-01-01 15:19:04

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	591K
描述
RF Small Signal Bipolar Transistor

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BFR750L3RHE6327XTSA1 技术参数

BFR750L3RH

Linear Low Noise SiGe:C Bipolar RF Transistor

• High gain ultra low noise RF transistor

• Based on Infineon's reliable high volume Silicon

Germanium technology

• Provides outstanding performance for a wide range

of wireless applications up to 10 GHz

• Ideal for WLAN and all 5-6 GHz applications

• High OIP3 and P

for driver stages

-1dB

• High maximum stable and available gain

= 21 dB at 1.8 GHz, G = 11.5 dB at 6 GHz

• Pb-free (RoHS compliant) and halogen-free very thin

small leadless package (package height 0.32 mm max.

ideal for modules)

• Qualification report according to AEC-Q101 available

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR750L3RH

Marking

Pin Configuration

2=C 3=E

Package

TSLP-3-9

1=B

2013-09-09

12 3 4 5 6 7

中文翻译

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