Datasheet > BFR843EL3

BFR843EL3

更新时间： 2023-12-06 20:08:52

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器
页数	文件大小	规格书
21页	539K
描述
BFR843EL3 适用于高速低功耗应用的低噪声双频带预匹配放大器，采用小体积 TSLP 封装。

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BFR843EL3 数据手册

BFR843EL3

Low noise broadband pre-matched RF bipolar transistor

Product description

The BFR843EL3 is a low noise dual band pre-matched transistor in a low profile package

for high speed and low power consumption applications.

Feature list

•

Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and

1 kV HBM ESD hardness

•

High transition frequency enables best in class noise performance at high frequencies:

NF_min= 1 dB at 2.4 GHz, 1.8 V, 8 mA and 1.15 dB at 5.5 GHz, 1.8 V, 8 mA

High gain G_ms= 24 dB at 2.4 GHz, 1.8 V, 15 mA and 21.5 dB at 5.5 GHz, 1.8 V, 15 mA

OIP₃= 20.5 dBm at 2.4 GHz, 1.8 V, 15 mA and 20.5 dBm at 5.5 GHz, 1.8 V, 15 mA

Suitable for low voltage applications e.g. V_CC= 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding

collector resistor)

•

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications

•

Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA

Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo...) and satellite C-band LNB (1st and 2nd

stage LNA)

Device information

Table 1

Part information

Product name / Ordering code

Package

Pin configuration

Marking

Pieces / Reel

BFR843EL3 / BFR843EL3E6327XTSA1

TSLP-3-10

1 = B 2 = C 3 = E T2

15000

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

v2.0

2018-09-26

12 3 4 5 6 7...21

中文翻译

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